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| 2N4856JAN/JANTX/JANTXV Series N-Channel JFETs 2N4856JAN 2N4857JAN 2N4858JAN 2N4859JAN 2N4860JAN 2N4861JAN Product Summary Part Number 2N4856 2N4857 2N4858 2N4859 2N4860 2N4861 2N4856JANTX 2N4857JANTX 2N4858JANTX 2N4859JANTX 2N4860JANTX 2N4861JANTX ID(off) Max (pA) 250 250 250 250 250 250 9 2N4856JANTXV 2N4857JANTXV 2N4858JANTXV 2N4859JANTXV 2N4860JANTXV 2N4861JANTXV VGS(off) (V) V(BR)GSS Min (V) -4 to -10 -2 to -6 -0.8 to -4 -4 to -10 -2 to -6 -0.8 to -4 -40 -40 -40 -30 -30 -30 rDS(on) Max (W) 25 40 60 25 40 60 tON Typ (ns) 10 20 9 10 20 Features D D D D D D Low On-Resistance: 2N4856 <25 W Fast Switching--tON: 4 ns High Off-Isolation--ID(off): 5 pA Low Capacitance: 3 pF Low Insertion Loss N-Channel Majority Carrier FET Benefits D D D D D D Low Error Voltage High-Speed Analog Circuit Performance Negligible "Off-Error," Excellent Accuracy Good Frequency Response, Low Glitches Eliminates Additional Buffering High Radiation Tolerance Applications D D D D D Analog Switches Choppers Sample-and-Hold Normally "On" Switches Current Limiters Description The 2N4856JAN/JANTX/JANTXV all-purpose JFET analog switches offer low on-resistance, low capacitance, good isolation, and fast switching. Hermetically-sealed TO-206AA (TO-18) packaging allows full military processing (see Military Information). For similar products in TO-226AA (TO-92) and TO-236 (SOT-23) packages, see the J/SST111 series data sheet. For similar duals, see the 2N5564/5565/5566 data sheet. TO-206AA (TO-18) S 1 2 D Top View 3 G and Case Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70244. Siliconix P-37515--Rev. B, 04-Jul-94 1 2N4856JAN/JANTX/JANTXV Series Absolute Maximum Ratings Gate-Drain, Gate-Source Voltage : (2N4856-58) . . . . . . . . . . . . . . . . . . -40 V (2N4859-61) . . . . . . . . . . . . . . . . . . -30 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA Lead Temperature (1/16" from case for 10 seconds) . . . . . . . . . . 300 _C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 200_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . -65 to 200_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1800 mW Notes a. Derate 10.3 mW/_C to TC > 25_C Specificationsa for 2N4856, 2N4857 and 2N4858 Limits 2N4856 2N4857 2N4858 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Currentd Drain Cutoff Current Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID( ff) D(off) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 0.5 nA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 10 mA VDS = 15 V, VGS = -10 V TA = 150_C ID = 5 mA -55 -40 -4 50 -10 175 -250 -500 -40 -2 20 -6 100 -250 -500 -40 V -0.8 8 -4 80 -250 -500 mA pA nA pA -5 -13 -5 5 13 0.25 0.35 0.5 250 500 250 500 250 500 0.5 nA Drain-Source On-Voltage VDS(on) VGS = 0 V ID = 10 mA ID = 20 mA 0.5 0.75 25 40 60 V Drain-Source On-Resistanced Gate-Source Forward Voltaged rDS(on) VGS(F) VGS = 0 V, ID = 1 mA IG = 1 mA , VDS = 0 V 0.7 W V Dynamic Common-Source Forward Transconductance d Common-Source Output Conductanced Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltaged gfs gos Ciss Crss en VDG = 10 V, ID = 10 mA f = 1 kHz 6 VDG = 20 V, ID = 1 mA G f = 1 kHz 25 7 VDS = 0 V, VGS = -10 V S f = 1 MHz 3 3 8 8 8 nV Hz 18 18 18 pF mS mS Switching Turn-On Turn On Time Turn-Off Time td(on) tr tOFF V, VDD = 10 V VGS(H) = 0 V See Switching Circuit g 2 2 13 6 3 25 6 4 50 10 10 100 ns 2 Siliconix P-37515--Rev. B, 04-Jul-94 2N4856JAN/JANTX/JANTXV Series Specificationsa for 2N4859, 2N4860 and 2N4861 Limits 2N4859 2N4860 2N4861 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentc Gate Reverse Current Gate Operating Currentd Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG ID( ff) D(off) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 0.5 nA VDS = 15 V, VGS = 0 V VGS = -15 V, VDS = 0 V TA = 150_C VDG = 15 V, ID = 10 mA VDS = 15 V, VGS = -10 V TA = 150_C ID = 5 mA -55 -30 -4 50 -10 175 -250 -500 -30 -2 20 -6 100 -250 -500 -30 V -0.8 8 -4 80 -250 -500 mA pA nA pA -5 -13 -5 5 13 0.25 0.35 0.5 250 500 250 500 250 500 0.5 nA Drain Cutoff Current Drain-Source On-Voltage VDS(on) VGS = 0 V ID = 10 mA ID = 20 mA 0.5 0.75 25 40 60 V Drain-Source On-Resistance Gate-Source Forward Voltage rDS(on) VGS(F) VGS = 0 V, ID = 1 mA IG = 1 mA , VDS = 0 V 0.7 W V Dynamic Common-Source Forward Transconductance d Common-Source Output Conductanced Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Equivalent Input Noise Voltaged gfs gos Ciss Crss en VDG = 10 V, ID = 10 mA f = 1 kHz 6 VDG = 20 V, ID = 1 mA G f = 1 kHz 25 7 VDS = 0 V, VGS = -10 V S f = 1 MHz 3 3 8 8 8 nV Hz 18 18 18 pF mS mS Switching Turn-On Turn On Time Turn-Off Time td(on) tr tOFF VDD = 10 V VGS(H) = 0 V V, See Switching Circuit g 2 2 19 6 3 25 6 4 50 10 10 100 NCB ns Notes a. TA = 25_C unless otherwise noted. b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. c. Pulse test: PW v100 ms duty cycle v10%. d. This parameter not registered with JEDEC. Siliconix P-37515--Rev. B, 04-Jul-94 3 2N4856JAN/JANTX/JANTXV Series Switching Time Test Circuit 4856/4859 VGS(L) RL* ID(on) *Non-inductive -10 V 464 W 20 mA 4857/4860 -6 V 953 W 10 mA 4858/4861 -4 V 1910 W 5 mA INPUT VIN tOFF 10% OUTPUT td(on) tr <20 ns tf <20 ns Input Pulse Rise Time < 1 ns Fall Time < 1 ns Pulse Width 100 ns PRF 1 MHz Sampling Scope Rise Time 0.4 ns Input Resistance 10 MW Input Capacitance 1.5 pF 90% tr VDD RL OUT VGS(H) VGS(L) 1 kW VIN Scope 51 W 51 W 4 Siliconix P-37515--Rev. B, 04-Jul-94 |
Price & Availability of 2N4856JANTXV
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